Computational Electronics & Photonics Group

Md. Mahbub Satter
Doctoral Student

Georgia Institute of Technology
School of Electrical and Computer Engineering

Email: mmsatter at gatech dot edu

Faculty Advisor:
P. Douglas Yoder

Education

Ph.D. student in Electrical Engineering, Georgia Institute of Technology.	Present
M.S. in Electrical Engineering, Bangladesh University of Engineering and Technology.	2008
B.S. in Electrical Engineering, Bangladesh University of Engineering and Technology.	2005

Research
Theory, Design and Simulation of wurtzite III-nitride
lasers and light-emitting diodes

Work Experience

Graduate Research Assistant, Electrical Engineering, Georgia Institute of Technology.

2009 - Current

Lecturer of Electrical & Electronic Engineering Department, 2005 - 2009

Bangladesh University of Engineering and Technology

Publications

Journal

(1) Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, M. M. Satter, S.-C. Shen, P. D. Yoder, J.-H. Ryou, R. D. Dupuis, Y. Wei, H. Xie, A. M. Fischer, and F. A. Ponce, "Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate", Applied Physics Letters, Vol. 102, Issue 10, pp. 101110, March 2013. [CLICK]

(2) M. M. Satter, Z. Lochner, J.-H. Ryou, S.-C. Shen, R. D. Dupuis and P. D. Yoder, "AlGaN-Based Lateral Current Injection Laser Diodes using Regrown Ohmic Contacts", IEEE Photonics Technology Letters, Vol. 25, Issue 3, pp. 313-316, February 2013. [CLICK]

(3) S. Choi, M.-H. Ji, J. Kim, H. J. Kim, M. M. Satter, P. D. Yoder, J.-H. Ryou, R. D. Dupuis, A. M. Fischer and F. A. Ponce, "Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers", Applied Physics Letters, Vol. 101, Issue 16, pp. 161110, October 2012. [CLICK]

(4) M. M. Satter, Z. Lochner, J.-H. Ryou, S.-C. Shen, R. D. Dupuis and P. D. Yoder, "Polarization Matching in AlGaN-Based Multiple Quantum Well Deep Ultraviolet Laser Diodes on AlN Substrates using Quaternary AlInGaN Barriers", IEEE Journal of Lightwave Technology, Vol. 30, Issue 18, pp. 3017-3025, September 2012. [CLICK]

(5) M. M. Satter, H.-J. Kim, Z. Lochner, J.-H. Ryou, S.-C. Shen, R. D. Dupuis and P. D. Yoder, "Design and Analysis of 250 nm AlInN Laser Diodes on AlN Substrates using Tapered Electron Blocking Layers", IEEE Journal of Quantum Electronics, Vol. 48, Issue 05, pp. 703-711, May 2012. [CLICK]

(6) M. M. Satter and P. D. Yoder, "Lateral carrier confinement and threshold current reduction in InGaN QW lasers with deeply etched mesa", Optical and Quantum Electronics, Vol. 42, Numbers 11-13, pp. 747-754, May 2011. [CLICK]

(7) M. R. Siddiqui, A. T. M. G. Sarwar, M. M. Satter, and A. Haque, “On the enhancement of the drain current in Indium rich InGaAs surface channel MOSFETs”, IEEE Transactions on Electron Devices, Vol. 59, Issue 06, pp. 1653-1660, June 2012. [CLICK]

(8) M. M. Satter, A. E. Islam, D. Varghese, M. A. Alam and A. Haque, "A self-consistent algorithm to extract interface trap states of MOS devices on alternative high-mobility substrates", Solid-State Electronics, Vol. 56, Issue 01, pp. 141-147, February 2011. [CLICK]

(9) M. M. Satter and A. Haque, "Modeling effects of interface traps on the gate C–V characteristics of MOS devices on alternative high-mobility substrates", Solid-State Electronics, Vol. 54, Issue 06, pp. 621-627, June 2010. [CLICK]

Conference

(1) Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, M. M. Satter, S.-C. Shen, P. D. Yoder, J.-H. Ryou, R. D. Dupuis, Y. Wei, H. Xie, A. M. Fischer, and F. A. Ponce, "Room-temperature optically pumped AlGaN-AlN multiple-quantum-well lasers operating at <260 nm grown by metalorganic chemical vapor deposition", Gallium Nitride Materials and Devices VIII, February 2-7, 2013. [CLICK]

(2) S. Choi, M.-H. Ji, H. J. Kim, J. Kim, R. Gong, M. M. Satter, P. D. Yoder, J.-H. Ryou, R. D. Dupuis, A. Fischer, and F. Ponce, "Efficiency Droop of III-Nitride-Based Visible Light-Emitting Diodes Employing InAlN Electron Blocking Layers", 16^th International Conference on Metal Organic Vapor Phase Epitaxy, May 20-25, 2012. [CLICK]

(3) J. Kim, M.-H. Ji, R. Gong, S. Choi, N. Sebkhi, M. M. Satter, P. D. Yoder, J.-H. Ryou, R. D. Dupuis, A. Fischer, and F. Ponce, "Effect of Hole Injection Layer and Electron Blocking Layer on Carrier Distributions in III-Nitride Visible Light-Emitting Diodes", 16^th International Conference on Metal Organic Vapor Phase Epitaxy, May 20-25, 2012. [CLICK]

(4) M. M. Satter and P. D. Yoder, "Lateral carrier confinement and threshold current reduction in GaN QW lasers with deeply etched mesa", 2010 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010, pp. 51-52, December 2010. [CLICK]

(5) M. M. Satter and A. Haque, "Direct extraction of interface trap states from the low frequency gate C-V characteristics of MOS devices with ultrathin high-K gate dielectrics", 2008 5th International Conference on Electrical & Computer Engineering, ICECE 2008, pp. 158-161, December 2008. [CLICK]

(6) M. M. Satter and A. Haque, "Modeling effects of interface trap states on the gate C-V characteristics of MOS devices with ultrathin high-K gate dielectrics", 2007 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2007, pp. 157-159, December 2007. [CLICK]