Creation of NPN Transistor |
| If your browser does not display the video properly, you may
download it and run it locally. Now the n-active regions of the NPN transistor are ready to be created. A layer of photoresist is grown and etched to define the regions which need to be doped. The poly line running through the middle of the n-active region makes the transistor self-aligned by preventing the arsenic from doping the area which will form the gate of the transistor. After the application of arsenic, the new NPN transistor is complete. |