Unit One: Large and Small Signal Device Models

Key Topics (like what could be on an exam)

• Large-signal models: Diode, BJT, and MOSFET, which includes Above and Below Threshold Models, Saturation and Ohmic Regions of operation.
• Small-signal models: Diode, BJT, and MOSFET (Above and Below Threshold Models, Saturation and Ohmic) models at both DC and capacitive small-signal modeling. At this level, all transistors have similar models, and therefore the differences are important when making design choices.

Reading Material

• Chapter 1: pn junctions (pp. 2-8), SubVT operation (pp. 65-71), above VT operation (pp. 38-42), (some incorrect assumptions, but similar flow) MOS Device Voltage limitations (1.5.5, pp. 48-49), MOS small signal models (pp.49-54), MOS parasitic elements (pp.54-57),
• Chapter 2: MOS Integrated Circuit Fabrication (2.8, 127-150 )
• Lecture Notes and Papers

Homework Problems ( Not to be handed in)

Laboratory Problems (To be handed in)

• Problem #1: MOSFET Transistors: Characteristics, modeling, and layout : Due Sept 18, 2006.