Advanced Semiconductor Technology Facility

 

Mission:

      The Advanced Semiconductor Technology Facility is dedicated to the advancement of semiconductor technology with the primary mission of “thinking out of the box”.  The facility’s main goal is to identify and eliminate current semiconductor limitations by combinations of established successful technology and novel, non-standard approaches.  To this end, both traditional and non-traditional tools are used in the facility.

 

Major Tools Include:

• Traditional:

• Riber 32 MBE system utilizing Plasma and Ammonia sources for the growth of AlN, GaN and InN semiconductor alloys and devices.

• Varian Gen II with Antimony and Arsenic cracker sources for AlGaIn(AsSb) semiconductor alloys and devices

• Full complement of characterization facilities

Novel Technologies

• Photo-assisted Metal Organic MBE for mixed AlGaInN and SiC materials and devices

• Chloride based Li-Metal-Oxide MBE system for Li(Nb,Ta and V ) Oxide epitaxy

• High Temperature (1900° C) SiC CVD epitaxy system_.