Journal Papers
2011 | 2010 | 2009 | 2008 | 2007 | 2006 - 1986
S. Seth, L. Najafizadeh, and J.D. Cressler, "On The RF Properties of Weakly-Saturated SiGe HBTs and Their Potential Use in Ultralow-Voltage Circuits," IEEE Electron Device Letters, vol. 32, pp. 3-5, 2011.
D.B. Thomas, L. Najafizadeh, J.D. Cressler, K.A. Moen, and N. Lourenco, "Optimization of SiGe Bandgap-Based Circuits for up to 300°C Operation," Solid-State Electronics, vol. 56, pp. 47-55, 2011.
C.E. Patterson, T.K. Thrivikraman, A.M. Yepes, S.M. Begley, S.K. Bhattacharya, J.D. Cressler, and J. Papapolymerou, "A Lightweight, Organic X-Band Phased Array with Integrated SiGe Amplifiers and Phase Shifters," IEEE Transactions on Antennas and Propagation, vol. 59, pp. 100-109, 2011.
K.C. Praveen, N. Pushpa, J.D. Cressler, and A.P.G. Prakash, "Analysis of High Energy Ion, Proton, and Co-60 Gamma Radiation Induced Damage in Advanced 200 GHz SiGe HBTs," Journal of Nanoelectronic Physics, vol. 3, pp. 348-357, 2011.
K.A. Moen, L. Najafizadeh, J. Seungwoo, A. Raman, M. Turowski, and J.D. Cressler, "Accurate Modeling of Single Event Transients in a SiGe Voltage Reference Circuit," IEEE Transactions on Nuclear Science, vol. 58, pp. 877-884, 2011.
A.P.G. Prakash and J.D. Cressler, "The Effects of 63 MeV Hydrogen Ion Irradiation on 65 GHz UHV/CVD SiGe HBT BiCMOS Technology," Journal of Radiation Effects and Defects in Solids, vol. 66, pp. 703-709, 2011.
K.C. Praveen, N. Pushpa, A. Tripati, D. Revannasiddaiah1, J.D. Cressler, and A.P.G. Prakash, "50 MeV Li3+ Ion Irradiation Effects on Advanced 200 GHz SiGe HBTs, Radiation Effects and Defects in Solids, vol. 66, pp. 710-717, 2011.
N. Pushpa, K.C. Praveen, A.P. Gnana Prakash, P.S. Naik, J.D. Cressler, S.K. Gupta, and D. Revannasiddaiah, "Reliability Studies on NPN RF Power Transistors Under Swift Heavy Ion Irradiation," Nuclear Instruments and Methods in Physics Research B, (on-line citation) doi: 10.1016/j.nimb.2011.07.032, 2011.
K.C. Praveen, N. Pushpa, P.S. Naik, J.D. Cressler, A. Tripathi, and A.P. Gnana Prakash, "Application of a Pelletron Accelerator to Study Total Dose Radiation Effects on 50 GHz SiGe HBTs," Nuclear Instruments and Methods in Physics Research B, (on-line citation) doi: 10.1016/j.nimb.2011.07.034, 2011.
C. Ulaganathan, N. Nambiar, K. Cornett, J.A. Yager, R. Greenwell, B. Prothro, K. Tham, S. Chen, R.S. Broughton, G. Fu, B.J. Blalock, C.L. Britton, Jr., M.N. Ericson, H.A. Mantooth, M. Mojarradi, R.W. Berger, and J.D. Cressler, "A SiGe BiCMOS Instrumentation Channel for Extreme Environment Applications," VLSI Design, vol. 2010, Article ID 156829, pp. 1-12 (on-line), 2010.
K.A. Moen and J.D. Cressler, "Measurement and Modeling of Carrier Transport Parameters Applicable to SiGe BiCMOS Technology Operating in Extreme Environments," IEEE Transactions on Electron Devices, vol. 57, pp. 551-561, 2010.
A. Appaswamy, P. Chakraborty, and J.D. Cressler, "Influence of Interface Traps on the Temperature Sensitivity of MOSFET Drain Current Variations," IEEE Electron Device Letters, vol. 31, pp. 387-389, 2010.
J. Yuan, K. Moen, J.D. Cressler, and H. Rücker, "SiGe HBT CML Ring Oscillator with 2.3 ps Gate Delay at Cryogenic Temperatures," IEEE Transactions on Electron Devices, vol. 57, pp. 1183-1187, 2010.
E.P. Wilcox, S.D. Phillips, J.D. Cressler, P.W. Marshall, M.A. Carts, L. Richmond, and B. Randall, "Non-TMR SEU-Hardening Techniques for SiGe HBT Shift Registers and Clock Buffers," IEEE Transactions on Nuclear Science, vol. 57, pp. 2119-2123, 2010.
R. Arora, J. Mitard, A. Madan, E. Simoen, E.X. Zhang, D.M. Fleetwood, B.K. Choi, R.D. Schrimpf, K.F. Galloway, S.R. Kulkarni, M. Meuris, C. Claeys, and J.D. Cressler, "Effects of Halo Doping and Si Capping Layer Thickness on Total Dose Effects in Ge p-MOSFETs," IEEE Transactions on Nuclear Science, vol. 57, pp. 1933-1939, 2010.
K.C. Praveen, N. Pushpa, Y.P. Prabakara Rao, G. Govindaraj, J.D. Cressler and A.P.G. Prakash,"Applications of Advanced 200 GHz SiGe HBTs for High Dose Radiation Environments," Solid State Electronics, vol. 54, pp. 1554-1560, 2010.
E.P. Wilcox, S.D. Phillips, J.D. Cressler, G. Vizkelethy, P.W. Marshall, J.A. Babcock, K. Kruckmeyer, R. Eddy, G. Cestra, and B. Zhang, "Single Event Transient Hardness of a New Complementary (npn + pnp) SiGe HBT Technology on Thick-film SOI," IEEE Transactions on Nuclear Science, vol. 57, pp. 3293-3297, 2010.
S. Phillips, K.A. Moen, L. Najafizadeh, R. Diestelhorst, A.K. Sutton, J.D. Cressler, G. Vizkelethy, P. Dodd, and P. Marshall, "A Comprehensive Understanding of the Efficacy of N-Ring SEE Hardening Methodologies in SiGe HBTs," IEEE Transactions on Nuclear Science, vol. 57, pp. 3400-3406, 2010.
M. Turowski, J.A. Pellish, K.A. Moen, A. Raman, J.D. Cressler, and R. Reed, "Reconciling 3-D Mixed-Mode Simulations and Measured Single-Event Transients in SiGe HBTs," IEEE Transactions on Nuclear Science, vol. 57, pp. 3342-3348, 2010.
S.J. Horst, S.D. Phillips, P. Saha, J.D. Cressler, D. McMorrow, P. Marshall, H. Gustat, B. Heinemann, G.G. Fisher, D. Knoll, and B. Tillack, "A Theory of Single-Event Transient Response in Resonant Tank Oscillators," IEEE Transactions on Nuclear Science, vol. 57, pp. 3349-3357, 2010.
T. Thrivikraman, E. Wilcox, S.D. Phillips, J.D. Cressler, C. Marshall, G. Vizkelethy, P. Dodd, and P. Marshall, "Design of Digital Circuits Using Inverse-mode Cascode SiGe HBTs for Single Event Upset Mitigation," IEEE Transactions on Nuclear Science, vol. 57, pp. 3582-3587, 2010.
K.A. Moen, E.P. Wilcox, S.D. Phillips, J.D. Cressler, H. Nayfeh, A. Sutton, D. McMorrow, G. Vizkelethy, and P. Dodd, "Evaluating the Influence of Various Body-Contacting Schemes on Single Event Transients in 45 nm SOI CMOS," IEEE Transactions on Nuclear Science, vol. 57, pp. 3366-3372, 2010.
Z. Xu, G. Niu, L. Luo, J.D. Cressler, P. Marshall, R. Reed, and M. Alles, "Charge Collection and SEU in SiGe HBT Current Mode Logic Operating at Cryogenic Temperatures," IEEE Transactions on Nuclear Science, vol. 57, pp. 3206-3211, 2010.
C.J. Marshall, P.W. Marshall, R.L. Ladbury, A. Waczynski, J.A. Pellish, R.D. Foltz, N.A. Dodds, D.M. Kahle, N. Boehm, R. Arora, J.D. Cressler, R.A. Reed, and K.A. LaBel, "Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Circuit from 16-300K," IEEE Transactions on Nuclear Science, vol. 57, pp. 3078-3086, 2010.
J. Andrews, C. Grens, and J.D. Cressler, “Compact Modeling of Mutual Thermal Coupling for the Optimal Design of SiGe HBT Power Amplifiers,” IEEE Transactions on Electron Devices, vol. 56, pp. 1529-1532, 2009.
A. Madan, S.D. Phillips, J.D. Cressler, P.W. Marshall, Q Liang, and G. Freeman, “Impact of Proton Irradiation on the RF Performance of 65 nm SOI CMOS Technology,” IEEE Transactions on Nuclear Science, vol. 56, pp. 1914-1919, 2009.
C.M. Grens, P. Cheng, and J.D. Cressler, “Reliability of SiGe HBTs for Power Amplifiers -- Part I: Large-Signal RF Performance and Operating Limits,” IEEE Transactions on Device and Materials Reliability, vol. 9, pp. 431-439, 2009.
P. Cheng, C.M. Grens, and J.D. Cressler, “Reliability of SiGe HBTs for Power Amplifiers -- Part II: Underlying Physics and Damage Modeling,” IEEE Transactions on Device and Materials Reliability, vol. 9, pp. 440-448, 2009.
N. Pushpa, A.P. Gnana Prakash, K.C. Praveen, J.D. Cressler, and D. Revannasiddaiah, “An investigation of electron and oxygen ion damage in Si npn RF power transistors,” Radiation Effects and Defects in Solids vol. 164, pp. 592–603, 2009.
L. Luo, G. Niu, K. Moen, and J.D. Cressler, “Compact Modeling of the Temperature Dependence of Parasitics Resistances in SiGe HBTs Down to 30 K,” IEEE Transactions on Electron Devices, vol. 56, pp. 2169-2177, 2009.
S. Courrèges, Y. Li, Z. Zhao, K. Choi, A. Hunt, S. Horst, J.D. Cressler, and J. Papapolymerou, “A Ka-Band Electronically Tunable Ferroelectric Filter,” IEEE Microwave and Wireless Components Letters, vol. 10, no. 6, pp. 356-358, 2009.
J.A. Pellish, R.A. Reed, D. McMorrow, G. Vizkelethy, J. Baggio, O. Duhmael, S.D. Phillips, A.K. Sutton, R. Diestelhorst, J.D. Cressler, P.E. Dodd, M.L. Alles, R.D. Schrimpf, P.W. Marshall, and K.A. LaBel, “Heavy Ion Microbeam and Broadbeam Transients in SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 56, pp. 3078-3084, 2009.
A. Madan, S.D. Phillips, E.P. Wilcox , J.D. Cressler, P.W. Marshall, P.F. Cheng, L. Del Castillo, Q. Liang, and G. Freeman, “The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI,” IEEE Transactions on Nuclear Science, vol. 56, pp. 3056-3261, 2009.
S.D. Phillips, T. Thrivikraman, A. Appaswamy, A.K. Sutton, J.D. Cressler, G. Vizkelethy, P.E. Dodd, R.A. Reed, and P.W. Marshall, “A Novel Device Architecture for SEU Mitigation: The Inverse-Mode Cascode SiGe HBT,” IEEE Transactions on Nuclear Science, vol. 56, pp. 3393-3401, 2009.
P. Cheng, J.A. Pellish, M.A. Carts, S. Phillips, E. Wilcox, T. Thrivikraman, L. Najafizadeh, J.D. Cressler, and P.W. Marshall, “Re-examining TID Hardness Assurance Test Protocols for SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 56, pp. 3318-3325, 2009.
L. Najafizadeh, R.M. Diestelhorst, M. Bellini, S.D. Phillips, P.K. Saha, J.D. Cressler, G. Vizkelethy, and P.W. Marshall, “Single Event Transient Response of SiGe Voltage References and Its Impact on the Performance of Analog and Mixed-Signal Circuits,” IEEE Transactions on Nuclear Science, vol. 56, pp. 3469-3476, 2009.
R.M. Diestelhorst, S. Phillips, A. Appaswamy, A.K. Sutton, J.D. Cressler, J.A. Pellish, R.A. Reed, G. Vizkelethy, P.W. Marshall, H. Gustat, B. Heinemann, G.G. Fischer, D. Knoll, and B. Tillack, “Using Junction Isolation to Single-Event Radiation Harden a 200 GHz SiGe:C HBT Technology Containing No Deep Trenches,” IEEE Transactions on Nuclear Science, vol. 56, pp. 3402-3407, 2009.
T. Zhang, X. Wei, G. Niu, J.D. Cressler, P.W. Marshall, and R.A. Reed, “A Mechanism versus SEU Impact Analysis of Collector Charge Collection in SiGe HBT Current Mode Logic,” IEEE Transactions on Nuclear Science, vol. 56, pp. 3071-3077, 2009.
L. Najafizadeh, J. Adams, S.D. Phillips, K.A. Moen, J.D. Cressler, S. Aslam, T. Stevenson, and B. Meloy "Sub-1K Operation of SiGe Transistors and Circuits," IEEE Electron Device Letters, vol. 30, pp. 508-510, 2009.
A. Appaswamy, S. Phillips, and J.D. Cressler, "Optimizing Inverse Mode SiGe HBTs for Immunity to Heavy- ion Induced, Single Event Upset," IEEE Electron Device Letters, vol. 30, pp. 511-513, 2009.
J. Yuan, J.D. Cressler, R. Krithivasan, T. Thrivikraman, M.H. Khater, D.C. Ahlgren, A.J. Joseph, and J.-S. Rieh, "On the Performance Limits of Cryogenically-Operated SiGe HBTs and Its Relation to Scaling for TeraHertz Speeds," IEEE Transactions on Electron Devices, vol. 56, pp. 1007-1019, 2009.
A. Madan, J.D. Cressler, and S. Koester, "Low-Frequency Noise in Buried-Channel SiGe n-MODFETs," Solid-State Electronics, vol. 53, pp. 901-904, 2009.
J.-L. Olvera-Cervantes, J.D. Cressler, J.-L. Medina-Monroy, T. Thrivikraman, B. Banerjee, and J. Laskar, “A New Analytical Method for Robust Extraction of the Small-Signal Equivalent Circuit for SiGe HBTs Operating at Cryogenic Temperatures,” IEEE Transactions on Microwave Theory and Techniques, vol. 56, pp. 568-574, 2008.
C.M. Grens, J.D. Cressler, and A.J. Joseph, “On Common-Base Avalanche Instabilities in SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 55, pp. 1276-1285, 2008.
E.J. Montes, R.A. Reed, J.A. Pellish, M.L. Alles, R.D. Schrimpf, R. A. Weller, M. Varadharajaperumal, G. Niu, A.K. Sutton, R. Diestelhorst, G. Espinel, R. Krithivasan, J.P. Comeau, J.D. Cressler, P.W. Marshall, and G. Vizkelethy, “Single Event Upset Mechanisms for Low Energy Deposition Events in SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 55, pp. 1581-1587, 2008.
M.A. Morton, J.P. Comeau, J.D. Cressler, M. Mitchell, and J. Papapolymerou, “A 5-bit Silicon-based X-band Phase Shifter Using a Hybrid pi/t High-pass/Low-pass Topology,” IET Microwaves, Antennas, and Propagation, vol. 2, pp. 19-22, 2008.
T.K. Thrivikraman, J. Yuan, J.C. Bardin, H. Mani, J.D. Cressler, and S. Weinreb, “SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers,” IEEE Microwave and Wireless Components Letters, vol. 18, pp. 476-478, 2008.
E.J. Montes, R.A. Reed, J.A. Pellish, M.L. Alles, R.D. Schrimpf, R. A. Weller, M. Varadharajaperumal, G. Niu, A.K. Sutton, R. Diestelhorst, G. Espinel, R. Krithivasan, J.P. Comeau, J.D. Cressler, P.W. Marshall, and G. Vizkelethy, "Single Event Upset Mechanisms for Low Energy Deposition Events in SiGe HBTs," IEEE Transactions on Nuclear Science, vol. 55, pp. 1581-1587, 2008.
Yao, D. Dai, R.C. Jaeger, and J.D. Cressler, "A 12-Bit Cryogenic and Radiation-Tolerant Digital-to- Analog Converter for Aerospace Extreme Environment Applications," IEEE Transactions on Industrial Electronics, vol. 55, pp. 2810-2819, 2008.
S.Y. Lee, C. Zhu, J.D. Cressler, and S.-H. Lee, “Emitter Scaling Dependence of Mixed-Mode Reliability Degradation in Silicon-Germanium Heterojunction Bipolar Transistors,” Japanese Journal of Applied Physics, vol. 47, no. 7, pp. 5309-5313, 2008.
J.P. Comeau, M.A. Morton, W.-M.L. Kuo, T. Thrivikraman, J.M. Andrews, C. Grens, J.D. Cressler, J.Papapolymerou, and M. Mitchell, “A Silicon-Germanium Receiver for X-Band Transmit/Receive Radar Modules,” IEEE Journal of Solid-State Circuits, vol. 43, pp. 1889-1896, 2008.
T. Thrivikraman, P. Cheng, S. Phillips, J. Comeau, M. Morton, J.D. Cressler, and P. Marshall, "On the Radiation Tolerance of SiGe HBT and CMOS-based Phase Shifters for Space-based, Phase-Array Antenna Systems," IEEE Transactions on Nuclear Science, vol. 55, pp. 3246-3252, 2008.
M. Bellini, S. Phillips, R.M. Diestelhorst, P. Cheng, J.D. Cressler, P.W. Marshall, M. Turowski, G. Avenier, A. Chantre, and P. Chevalier, "Novel Total Dose and Heavy-Ion Charge Collection Phenomena in a New SiGe HBT on Thin-Film SOI Technology," IEEE Transactions on Nuclear Science, vol. 55, pp. 3197-3201, 2008.
L. Najafizadeh, T. Vo, S. Phillips, P. Cheng, J.D. Cressler, M. Mojarradi, and P.W. Marshall, "The Effects of Proton Irradiation on the Performance of High-Voltage nMOSFETs Implemented in a Low-Voltage SiGe BiCMOS Platform," IEEE Transactions on Nuclear Science, vol. 55, pp. 3253-3258, 2008.
J.A. Pellish, R.A. Reed, N.D. Pate, D. McMorrow, J.S. Melinger, J.A. Kozub, P.W. Marshall, A.K. Sutton, R.M. Diestelhorst, S. Phillips, J.D. Cressler, R.A. Weller, R.D. Schrimpf, and G.F. Niu, "Laser-Induced Current Transients in Silicon-Germanium HBTs," IEEE Transactions on Nuclear Science, vol. 55, pp. 2936-2942, 2008.
X. Wei, T. Zhang, G. Niu, M. Varadharajaperumal, J. D. Cressler, and P. W. Marshall, "3-D Simulation of Single Event Transients in SiGe HBT Emitter Followers and Resultant Hardening Guidelines," IEEE Transactions on Nuclear Science, vol. 55, pp. 3360-3366, 2008.
J. Yuan, J.D. Cressler, C. Zhu, Y. Cui, G. Niu, Q. Liang, and A.J. Joseph, “An Investigation of Negative Differential Resistance and Novel Collector Current Kink Effects in SiGe HBTs Operating at Cryogenic Temperatures,” IEEE Transactions on Electron Devices, vol. 54, pp. 504-516, 2007.
J.P. Comeau, L. Najafizadeh, J. Andrews, A.P.G. Prakash, and J.D. Cressler, “An Exploration of Substrate Coupling at K-Band Between a SiGe HBT Power Amplifier and a SiGe HBT Voltage-Controlled-Oscillator,” IEEE Microwave and Wireless Components Letters, vol. 17, pp. 349-351, 2007.
A. Appaswamy, M. Bellini, W.-M.L. Kuo, P. Cheng, J. Yuan, C. Zhu, J.D. Cressler, G. Niu, and A.J. Joseph, “Impact of Scaling on the Inverse Mode Operation of SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 54, pp. 1492-1501, 2007.
C.M. Grens, J.D. Cressler, J.A. Andrews, Q. Liang, and A.J. Joseph, “The Effects of Scaling and Bias Configuration on Operating Voltage Constraints in SiGe HBTs for Mixed-Signal Circuits,” IEEE Transactions on Electron Devices, vol. 54, pp. 1605-1616, 2007.
R.A. Reed, G. Vizkelethy, J.A. Pellish, B. Sierawski, K.M. Warren, M. Porter, J. Wilkinson, P.W. Marshall, G. Niu, J.D. Cressler, R.D. Schrimpf, A. Tipton, and R.A. Weller, “Applications of Heavy Ion Microprobe For Single Event Effects Analysis,” Nuclear Instruments and Methods in Physics Research B, vol. 261, pp. 443-446, 2007.
P. Cheng, C. Zhu, A. Appaswamy, and J.D. Cressler, “A New Current-Sweep Method for Assessing the Mixed-Mode Damage Spectrum of SiGe HBTs,” IEEE Transactions on Device and Materials Reliability, vol. 7, pp. 479-487, 2007.
D.K. Chen, R.D. Schrimpf, D.M. Fleetwood, K.F. Galloway, H. Lee, G. Lucovsky, B. Jun, and J.D. Cressler, “Total Dose Response of HfSiON MOS Capacitors,” IEEE Transactions on Nuclear Science, vol. 54, pp. 1931-1937, 2007.
P. Cheng, B. Jun, A.K. Sutton, C. Zhu, A. Appaswamy, J.D. Cressler, R.D. Schrimpf, and D.M. Fleetwood, “Probing Radiation- and Hot Electron-Induced Damage Processes in SiGe HBTs Using Mixed-Mode Electrical Stress,” IEEE Transactions on Nuclear Science, vol 54, pp. 1938-1945, 2007.
A.K. Sutton, J.P. Comeau, R. Krithivasan, J.D. Cressler, J.A. Pellish, R.A. Reed, P.W. Marshall, M. Varadharajaperumal, G. Niu, and G. Vizkelethy, “An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs,” IEEE Transactions on Nuclear Science, voil. 54, pp. 2044-2052, 2007.
T.S. Mukherjee, K.T. Kornegay, A.K. Sutton, R. Krithivasan, J.D. Cressler, G. Niu, and P.W. Marshall, “A Novel Circuit-Level SEU-Hardening Technique For Low-Voltage, Ultra-High-Speed SiGe HBT Logic Circuits,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2086-2091, 2007.
B. Jun, A. Sutton, R.M. Diestelhorst, G.J. Duperon, J.D. Cressler, J.D. Black, T. Haeffner, R.A. Reed, M.L. Alles, R.D. Schrimpf, D.M. Fleetwood, and P.W. Marshall, “The Application of RHBD to n-MOSFETs Intended for Use in Cryogenic-Temperature Radiation Environments,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2100-2105, 2007.
R.M. Diestelhorst, S. Finn, B. Jun, A.K. Sutton, P. Cheng, P.W. Marshall, J.D. Cressler, R.D. Schrimpf, D.M. Fleetwood, H. Gustat, B. Heinemann, G.G. Fischer, D. Knoll, and B. Tillack, “The Effects of X-Ray and Proton Irradiation on a 200 GHz / 90 GHz Complementary (npn + pnp) SiGe:C HBT Technology,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2190-2195, 2007.
L. Najafizadeh, B. Jun, J.D. Cressler, A.P.G. Prakash, P.W. Marshall, and C.J. Marshall, “A Comparison of the Effects of X-Ray and Proton Irradiation on the Performance of SiGe Precision Voltage References,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2238-2244, 2007.
M. Bellini, B. Jun, A.C. Appaswamy, P. Cheng, J.D. Cressler, P.W. Marshall, B. El-Kareh, S. Balster, and H. Yasuda, “The Effects of Proton Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2245-2250, 2007.
A. Madan, B. Jun, R.M. Diestelhorst, A. Appaswamy, J.D. Cressler, R.D. Schrimpf, D.M. Fleetwood, T. Isaacs-Smith, J.R. Williams, and S.J. Koester, “Radiation Tolerance of Si/SiGe n-MODFETs,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2251-2256, 2007.
J.A. Pellish, R.A. Reed, R.A. Weller, M.H. Mendenhall, P.W. Marshall, A.K. Sutton, R. Krithivasan, J.D. Cressler, S.M. Currie, R.D. Schrimpf, K.M. Warren, B.D. Sierawski, and G. Niu, “On-Orbit Event Rate Calculations for SiGe HBT Shift Registers,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2322-2329, 2007.
M. Varadharajaperumal, G. Niu, X. Wei, T. Zhang, J.D. Cressler, R.A. Reed, and P.W. Marshall, “3-D Simulation of SEU Hardening of SiGe HBTs Using Shared Dummy Collector,” IEEE Transactions on Nuclear Science vol. 54, pp. 2330-2337, 2007.