Conference Papers
2011 | 2010 | 2009 | 2008 | 2007 | 2006 - 1986
R. Arora, S. Seth, C.H.J. Poh, J.D. Cressler, A.K. Sutton, and H.M. Nayfeh, "Impact of Source/Drain Contact Spacing on the RF Reliability of 45-nm RF MOSFETs," Proceedings of the 2011 IEEE International Reliability Physics Symposium," pp. 461-466, 2011.
T.K. Thrivikraman, A. Madan, and J.D. Cressler, "On the Large-Signal Robustness of SiGe HBT LNAs for High-Frequency Wireless Applications," Proceedings of the 2010 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 156-159, 2010.
A. Madan, T.K. Thrivikraman, S. Seth, R. Verma, J. Poh, and J.D. Cressler, "A New and Simple Measurement Approach for Characterizing Intermodulation Distortion Without Using a Spectrum Analyzer," Proceedings of the 2010 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 88-91, 2010.
J.C.-H. Poh, P. Cheng, T.K. Thrivikraman, and J.D. Cressler, "A High Gain, High Linearity, L-Band SiGe Low Noise Amplifier with Fully-integrated Matching Network," Proceedings of the 2010 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 69-71, 2010.
C.E. Patterson, T.K. Thrivikraman, S.K. Bhattacharya, J.D. Cressler, and J. Papapolymerou, "A Lightweight X-Band Organic Antenna Array with Integrated SiGe Amplifier," Proceedings of the 2010 IEEE Radio and Wireless Symposium, pp. 84-87, 2010.
R.M. Diestelhorst, S. Finn, L. Najafizadeh, D. Ma, P. Xi, C. Ulaganathan, J.D. Cressler, B. Blalock, F. Dai, A. Mantooth, L. Del Castillo, M. Mojarradi, and R. Berger, "A Monolithic, Wide-Temperature, Charge Amplification Channel for Piezoelectric Sensing Applications in Extreme Environments," Proceedings of the 2010 IEEE Aerospace Conference, pp. 1-9 (on CD ROM), 2010.
C. Webber, J. Holmes, M. Francis, R. Berger, A. Mantooth, K. Cornett, B. Blalock, R. Greenwell, J.D. Cressler, R. Diestelhorst, and A. Authurs, "Event Driven Mixed-Signal Modeling Techniques for System-in-Package Functional Verification," Proceedings of the 2010 IEEE Aerospace Conference, pp. 1-15 (on CD ROM), 2010.
D.B. Thomas, N. Lourenco, J.D. Cressler, and S. Finn, " SiGe Amplifier and Buffer Circuits for High Temperature Applications," Proceedings of the 2010 IMAPS International High-Temperature Electronics Conference, pp. 379-385, 2010.
P.S. Chakraborty, K.A. Moen, J.D. Cressler, H. Ho, H. Yasuda, B. Eklund, and R. Wise, "Predictive Output Conductance Modeling of SiGe HBTs Using TCAD," Proceedings of the 2010 IEEE International SiGe Technology and Devices Meeting, pp. 1-2 (on CD ROM), 2010
C.H.J. Poh, S.K. Bhattacharya, J. Ferguson J.D. Cressler, and J. Papapolymerou, "Extraction of a Lumped Element, Equivalent Circuit Model for Via Interconnections in 3-D Packages Using a Single Via Structure with Embedded Capacitors," Proceedings of the 2010 Electronic Components and Technology Conference, pp. 1783-1788, 2010.
J.D. Cressler, "A New Approach to Microelectronics and Nanotechnology Education for Undergraduates of All Disciplines, Proceedings of the 2010 American Association of Engineering Education Annual Conference, paper AC-2010-89, pp. 1-12 (on CDROM), 2010.
S. Horst, P. Chakraborty, P. Saha, J.D. Cressler, H. Gustat, B. Heinemann, G.G. Fischer, D. Knoll, and B. Tillack, "A Comparison of npn vs. pnp SiGe HBT Oscillator Phase Noise Performance in a Complementary SiGe Platform," Proceedings of the 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 13-16, 2010.
S. Seth, T. Thrivikraman, P. Cheng, J.D. Cressler, J. Babcock, and A. Buchholz, "A Large-signal RF Reliability Study of Complementary SiGe HBTs on SOI Intended for Use in Wireless Applications," Proceedings of the 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 133-136, 2010.
P. Cheng, S. Horst, S. Phillips, S. Seth, R. Mills, J.D. Cressler, J. Babcock, and A. Buchholz, "An Investigation of Low-Frequency and Phase Noise in Complementary SiGe HBTs on SOI," Proceedings of the 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 165-168, 2010.
J. Yuan, K.A. Moen, and J.D. Cressler, "An Investigation of Collector-Base Transport in SiGe HBTs Designed for Half-Terahertz Speeds," Proceedings of the 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 157-160, 2010.
P. Saha and J.D. Cressler, "A Tunable, SiGe X-band Image Reject Mixer," Proceedings of the 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 196-199, 2010.
K.A. Moen, J. Yuan, P. Chakraborty, M. Bellini, J.D. Cressler, H. Ho, H. Yasuda, and R. Wise, "Improved 2-D Regional Transit Time Analysis for Optimized Scaling of SiGe HBTs," Proceedings of the 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 257-260, 2010.
S. Shankar, S. Horst, and J.D. Cressler, "Frequency- and Amplitude-Tunable X-to-Ku Band SiGe Ring Oscillators for Multiband BIST Applications," Proceedings of the 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 9-12, 2010.
A. Madan, J.D. Cressler, and A.J. Joseph, "A High-Linearity Inverse-Mode SiGe BiCMOS RF Switch," Proceedings of the 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 61-64, 2010.
P.S. Chakraborty, S.J. Horst, K.A. Moen, M. Bellini, and J.D. Cressler, "An Investigation of Electro-thermal Instabilities of 150 GHz SiGe HBTs Fabricated on SOI," Proceedings of the 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 141-144, 2010.
L. Luo, G. Niu, L. Najafizadeh, and J.D. Cressler, "Impact of the Non-ideal Temperature Dependence of IC-VBE on Ultra-Wide Temperature Range SiGe HBT Bandgap Reference Circuits," Proceedings of the 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 220-223, 2010.
C.E. Patterson, T.K. Thrivikraman, A.M. Yepes, S.K. Bhattacharya, J.D. Cressler, and J. Papapolymerou, "Implementation of a Low Cost, Lightweight X-Band Antenna with Integrated SiGe RF Electronics," Proceedings of the 2010 IEEE International Geoscience and Remote Sensing Symposium, pp. 681-684, 2010.
A.S. Keys, J.H. Adams, L.M. Smith, R.E. Ray, and J.D. Cressler, "Advanced Avionics and Processor Systems for a Flexible Space Exploration Architecture," Proceedings of the 2010 AIAA Space Conference, pp. 1-8 (on CD-ROM), 2010.
W.T. Khan, S. Bathacharya, S. Horst, J.D. Cressler, and J. Papapolymerou, "Low Phase Noise K-band Oscillator on Organic Liquid Crystal Polymer (LCP) Substrate," Proceedings of the 2010 IEEE MTT-S International Microwave Symposium, pp. 1186-1189, 2010.
D.C. Howard, C.H.J. Poh, and J.D. Cressler, "A 3-20 GHz SiGe HBT Ultra-Wideband LNA with Gain and Return Loss Control for Multiband Wireless Applications," Proceedings of the 2010 IEEE Midwest Symposium on Circuits and Systems, pp. 445-448, 2010.
Z. Xu, G. Niu, L. Luo, and J.D. Cressler, "Physics-Based Trap-Assisted Tunneling Current Model for Cryogenic Temperature Compact Modeling of SiGe HBTs," Proceedings of the 2010 Electrochemical Society Symposium on SiGe and Ge: Materials, Processing, and Devices, vol. 33, pp. 301-310, 2010.
M. Mudholkar, H. A. Mantooth, G. Niu, J.D. Cressler, "Direct Parameter Extraction of Base and Emitter Resistances for SiGe HBTs Using DC Data Only," Proceedings of the 2010 Electrochemical Society Symposium on SiGe and Ge: Materials, Processing, and Devices, vol. 33, pp. 337-348, 2010.
C.H.J. Poh, D.C. Howard, P. Cheng, J. Papapolymerou, and J.D. Cressler, "De-Embedding Transmission Lines Using a Full-wave EM-Simulated Pad Model," Technical Digest of the 2010 IEEE Asia-Pacific Microwave Symposium, pp. 1208-1211, 2010.
C.H.J. Poh, S.K. Bhattacharya, J.D. Cressler, and J. Papapolymerou, "Extraction of a Lumped Model for Via Interconnection in LCP Using a Single Via Structure With Embedded Capacitor," Proceedings of the 2010 IEEE Electronic Components and Technology Conference, pp. 1783-1788, 2010.
A. Madan, S. Seth, J.D. Cressler, X. Bi, and K. Green "Understanding and Modeling of Linearity in Silicon-Germanium Heterojunction Bipolar Transistors, Proceedings of the 2010 Semiconductor Research Corporation TECHCON, paper 4.7, pp. 1-4, 2010 (on CDROM).
R. Arora, K.A. Moen, A. Madan, J.D. Cressler, E.X. Zhang, D.M. Fleetwood, R.D. Schrimpf A.K. Sutton, and H.M. Nayfeh, "Impact of Body Tie and Source/Drain Contact Spacing on the Hot Carrier Reliability of 45-nm RF-CMOS," Proceedings of the 2010 International Integrated Reliability Workshop, pp. 56-60, 2010.
S. Horst, S. Phillips, H. Lavasani, F. Ayazi, and J.D. Cressler, “SiGe Digital Frequency Dividers with Reduced Residual Phase Noise,” Proceedings of the 2009 IEEE Custom Integrated Circuits Conference, pp. 251-254, 2009.
D. Ma, X. Geng, F. Dai, and J.D. Cressler, “A 6th Order Butterworth SC Low Pass Filter for Cryogenic Applications from -180ºC to 120ºC,” Proceedings of the 2009 IEEE Aerospace Conference,” pp. 1-8 (on CD ROM), 2009.
P. Cheng, S. Seth, C.M. Grens, T.K. Thrivikraman, M. Bellini, J.D. Cressler, J. Babcock, T. Chen, J. Kim, and A. Buchholz, “Understanding the RF Safe-Operating-Area of SiGe HBTs on SOI,” Proceedings of the 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 17-20, 2009.
S. Seth, P. Cheng, C.M. Grens, J.D. Cressler, J. Babcock, T. Chen, J. Kim, and A. Buchholz, “Comparing RF Linearity of npn and pnp SiGe HBTs Fabricated on Thick-film SOI,” Proceedings of the 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 29-32, 2009.
T.K. Thrivikraman, A. Appaswamy, S.D. Phillips, A.K. Sutton, and J.D. Cressler, “A Novel Device Structure using a Shared-Subcollector, Cascoded Inverse-Mode SiGe HBT for Enhanced Radiation Tolerance,” Proceedings of the 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 79-82, 2009.
J. Yuan and J.D. Cressler, “A Novel Superjunction Collector Design for Improving Breakdown Voltage in High-Speed SiGe HBTs,” Proceedings of the 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 75-78, 2009.
T.K. Thrivikraman, W.-M.L. Kuo, and J.D. Cressler, “A Two-Channel, Ultra-Low-Power, SiGe BiCMOS Receiver Front-end for X-Band Phased Array Radars,” Proceedings of the 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 43-46, 2009.
D.C. Howard, X. Li, and J.D. Cressler, “A Low-Power, 1.8-2.6 dB Noise Figure, SiGe HBT Wideband LNA for Multiband Wireless Applications,” Proceedings of the 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 55-58, 2009.
D.B. Thomas, J.D. Cressler, L. Najafizadeh, R.W. Johnson, L. Peltz, and S. Phillips, “Performance and Reliability of SiGe Devices and Circuits For High-Temperature Applications,” Proceedings of the 2009 IMAPS International High-Temperature Electronics Network Conference, pp. 49-56, 2009.
C. Patterson, T.K. Thrivikraman, S. Bhattacharya, C.H.J. Poh, J.D. Cressler, and J. Papapolymerou, “Organic Wafer-Scale Packaging for X-Band SiGe Low Noise Amplifier,” Proceedings of the2009 IEEE European Microwave Symposium, pp. 141-144, 2009.
T.K. Thrivikraman, C.M. Grens, J.M. Andrews, W.-M.. Kuo, J.P. Comeau, M. Morton, J.D. Cressler, J. Papapolymerou, and M. Mitchell, "A Single-Chip 4-Bit SiGe BiCMOS T/R Module for X-Band Phased- Array Radar Systems," Proceedings of the XXX Union of Radio Science (URSI) Meeting, p. 1-2 (on CDROM), 2009.
C.M. Grens, P. Cheng, and J.D. Cressler, "An Investigation of the Large-Signal RF Safe-Operating-Area on Aggressively-Biased Cascode SiGe HBTs for Power Amplifier Applications," Proceedings of the 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 237-240, 2009.
T.K. Thrivikraman, C.M. Grens, W.-M.L. Kuo, J.A. Andrews, and J.D. Cressler, "A High-Linearity, X-band, SiGe Low-Noise Amplifier for Improved Dynamic Range in Next-Generation Radar and Wireless Systems," Proceedings of the 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 221-224, 2009.
P.K. Saha, J.P. Comeau, and J.D. Cressler, "A K-band nMOS SPDT switch and 1-bit Phase Shifter Implemented in 130nm SiGe BiCMOS Technology," Proceedings of the 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 92-95, 2009.
Z. Xu, G. Niu, L. Luo, P.S. Chakraborty, D. Thomas, P. Cheng, and J.D. Cressler, "Cryogenic RF Small- Signal Modeling and Parameter Extraction of SiGe HBTs," Proceedings of the 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 96-99, 2009.
S. Horst and J.D. Cressler, "AM/PM Nonlinearities in SiGe HBTs," Proceedings of the 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 241-244, 2009.
S. Sanathanamurthy, V. Ramachandran, M.L. Alles, R.A. Reed, L.W. Massengill, A. Raman, M. Turowski, A. Mantooth, M. Barlow, K. Moen, M. Bellini, A. Sutton, and J.D. Cressler, "Simulation of SRAM SEU Sensitivity at Reduced Operating," Proceedings of the 2009 GOMAC-Tech -Government Microcircuit Applications and Critical Technology Conference, pp. 551-554, 2009.
K. Climer, T. Haeffner, M.L. Alles, L.W. Massengill, R.A. Reed, B. Blalock, and J.D. Cressler, "Simulation- based Study of Single Event Transients in a SiGe BiCMOS Low Power Operational Amplifier," Proceedings of the 2009 GOMAC-Tech-Government Microcircuit Applications and Critical Technology Conference, pp. 539-542, 2009.
A. Madan, T. Thrivikraman, and J.D. Cressler, "Failure Mechanisms in CMOS-Based RF Switches Subjected to RF Stress," Proceedings of the 2009 IEEE International Reliability Physics Symposium, pp. 741- 744, 2009.
S. Phillips, A. Sutton, M. Bellini, A. Appaswamy, J. Cressler, A. Grillo, G. Vizkelethy, P. Marshall, M. McCurdy, R. Reed, and P. Dodd, "Impact of Deep Trench Isolation on Advanced SiGe HBT Reliability in Radiation Environments," Proceedings of the 2009 IEEE International Reliability Physics Symposium, pp. 157-164, 2009.
P.S. Chakraborty, A. Appaswamy, P.K. Saha, N.K. Jha, J.D. Cressler, H. Yasuda, B. Eklund, and R. Wise, "Mixed-Mode Stress Degradation Mechanisms in pnp SiGe HBTs," Proceedings of the 2009 IEEE International Reliability Physics Symposium, pp. 83-88, 2009.
J. Yuan and J.D. Cressler, “Enhancing the Speed of SiGe HBTs Using fT-Doubler Techniques,” Proceedings of the 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 50-53, 2008.
P. Cheng, A. Appaswamy, M. Bellini, and J.D. Cressler, “Probing Hot Carrier Phenomena in npn and pnp SiGe HBTs,” Proceedings of the 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 54-57, 2008.
R. Berger, J.D. Cressler, R. Garbos, M. Mojarradi, L. Peltz, B. Blalock, W. Johnson, G. Niu, F. Dai, A. Mantooth, J. Holmes, M. Alles, P. McCluskey, “Miniaturized Data Acquisition System for Extreme Temperature Environments,” Proceedings of the 2008 IEEE Aerospace Conference,” pp. 1-7 (on CD ROM), 2008.
A.S. Keys, J.H. Adams, J.D. Cressler, R.C. Darty, M.A. Johnson, and M.C. Patrick, “High Performance, Radiation Hardened Electronics for Space and Lunar Environments, Proceedings of the 2008 Space Technology and Applications International Forum (STAIF), pp. 749-756, 2008.
A. Madan, J.D. Cressler, and S. Koester, “Low-Frequency Noise in Buried-Channel SiGe n-MODFETs,” Proceedings of the 2008 International Silicon-Germanium Technology and Devices Meeting (ISTDM), pp. 60-61, 2008.
P. Cheng, C.M. Grens, A. Appaswamy, P. Chakraborty and J.D. Cressler, “Modeling Mixed-Mode DC and RF Stress in SiGe HBT Power Amplifiers,” Proceedings of the 2008 Bipolar/BiCMOS Circuits and Technology Meeting, pp. 133-136, 2008.
C.M. Grens, S. Seth, and J.D. Cressler, “Common-base Intermodulation Characteristics of SiGe HBTs,” Proceedings of the 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 244-247, 2008.
J. Yuan, J.D. Cressler, Y. Cui, G. Niu, S. Finn, and A. Joseph, “On the Profile Design of SiGe HBTs for RF Lunar Applications Down to 43 K,”Proceedings of the 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 25-28, 2008.
X. Li, W.-M.L. Kuo, and J.D. Cressler, “A 40 GS/s SiGe Track-and-Hold Amplifier,” Proceedings of the 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 1-4, 2008.
L. Luo, G. Niu, D. Thomas, J. Yuan, and J.D. Cressler, “Forced-IE Pinch-in Maximum Output Voltage Limit in SiGe HBTs Operating at Cryogenic Temperatures,” Proceedings of the 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 41-44, 2008.
J. Andrews, J.D. Cressler, W.-M.L. Kuo, C.M. Grens, T. Thrivikraman, and S. Phillips, “An 850 mW X-BandSiGe Power Amplifer,” Proceedings of the 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting ,pp. 109-112, 2008.
Z. Xu, X. Wei, G. Niu, L. Luo, D. Thomas, and J.D. Cressler, “Modeling of Temperature Dependent IC-VBE Characteristics of SiGe HBTs from 43-400K,” Proceedings of the 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 81-84, 2008.
T.K. Thrivikraman, W.-M.L. Kuo, J.P. Comeau, and J.D. Cressler, “The Impact of Technology Node Scaling on nMOS SPDT RF Switches,” Technical Digest of the 2008 IEEE European Microwave Symposium, pp.374-377, 2008.
C. Patterson, S. Horst, S. Bhattacharya, J.D. Cressler, and J. Papapolymerou, “Low Cost Organic Packaging For Silicon Based mm-wave Wireless Systems,” Technical Digest of the 2008 IEEE European Microwave Symposium, pp. 1242-1245, 2008.
M. Bellini, J.D. Cressler, M. Turowski, G. Avenier, A. Chantre, and P. Chevalier, “3-D Regional Transit Time Analysis of SiGe HBTs on Thin-Film SOI,” Proceedings of the 2008 Electrochemical Society Symposium on SiGe and Ge: Materials, Processing, and Devices, vol. 16(10), pp. 1079-1088, 2008.
A.S. Keys, J.H. Adams, M.C. Patrick, M.A. Johnson, and J.D. Cressler, “A Review of NASA’s Radiation-Hardened Electronics for Space Environments Project,” Proceedings of the 2008 AIAA Space Conference, pp.1-7 (on CD-ROM), 2008.
C. Ulaganathan, N. Nambiar, B. Prothro, R. Greenwell, S. Chen, H. Hoang, R. Broughton, K. Cornett, G. Fu, B.J. Blalock, C.L. Britton, Jr., M.N. Ericson, H.A. Mantooth, J.D. Cressler, and R.W. Berger, “A SiGe BiCMOS Instrumentation Channel for Extreme Environment Applications,” Proceedings of the IEEE Midwest Symposium on Circuits and Systems, pp. 217-220, 2008.
M. Ullán, J. Rice, G. Brooijmans, J.D. Cressler, D. Damiani, S. Díez, T. Gadfort, A. A. Grillo, R. Hackenburg, G. Hare, A. Jones, J. Kierstead, W. Konnenenko, I. Mandić, F. Martinez-McKinney, J. Metcalfe, F. M. Newcomer, J. A. Parsons, S. Phillips, S. Rescia, H.F.-W. Sadrozinski, A. Seiden, E. Spencer, H. Spieler, A. K. Sutton, Y. Tazawa, M. Wilder, and E. Wulf, “Evaluation of Two SiGe HBT Technologies for the ATLAS sLHC Upgrade,” Proceedings of the 2008 Topical Workshop on Electronics for Particle Physics, pp. 111-115, 2008.
J.S. Rice, M. Ullan, G. Brooijmans, J. D. Cressler, D. Damiani1, S. Diez, T. Gadfort, A.A. Grillo, R. Hackenburg, G. Hare, A. Jones, J. Kierstead, W. Kononenko, I. Mandić, F. Martinez-McKinney, J. Metcalfe, F. M. Newcomer, J. A. Parsons, S. Phillips, S. Rescia, H. F. F-W. Sadrozinski, A. Seiden, N. Spencer, H. Spieler, A. K. Sutton, Y. Tazawa, E. Wulf, M. Wilder, Performance of the SiGe HBT 8HP and 8WL Technologies after High Dose/Fluence Radiation Exposure,” Proceedings of the 2008 IEEE Nuclear Science Symposium and Medical Imaging Conference, pp. 2206-2210, 2008.
A. Madan, S.D. Phillips, J.D. Cressler, P.W. Marshall, Q. Liang, and G. Freeman, “Impact of Proton Irradiation on the RF Performance of 65 nm SOI CMOS Technology,” Proceedings of the 2008 IEEE Radiation Effects on Components and Systems (RADECS) Conference, pp. 47-52, 2008.
2007 Papers
W.-M.L. Kuo, J.P. Comeau, J.M. Andrews, J.D. Cressler, and M.A. Mitchell, “A Comparison of Shunt and Series/Shunt nMOSFET Single-Pole Double-Throw Switches for X-Band Phased Array T/R Modules,” Proceedings of the 2007 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 249-252, 2007.
S. Venkataraman, B. Banerjee, C.-H. Lee, J. Laskar, J. Papapolymerou, and J.D. Cressler, “Cryogenic Small-Signal Operation of 0.18 µm MOSFETs,” Proceedings of the 2007 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 52-55, 2007.
Y. Cui, G. Niu, Y. Li, S.S. Taylor, Q. Liang, and J. D. Cressler, “On the Excess Noise Factors and Noise Parameter Equations for RF CMOS,” Proceedings of the 2007 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 40-43, 2007.
M.L. Alles, R.A. Reed, A.N. Kalavagunta, B.D. Sierawski, J.A. Pellish, E. Montes, B. Blalock, L. Peltz, J.D.Cressler, P.W. Marshall, and G. Niu, “Implications of Cold Temperature Environments for Single Event Radiation Effects,” Proceedings of the 2007 GOMAC-Tech - Government Microcircuit Applications and Critical Technology Conference, pp. 429-432, 2007.
P. Cheng, C. Zhu, J.D. Cressler, and A.J. Joseph, “The Mixed-Mode Damage Spectrum of SiGe HBTs,” Technical Digest of the2007 IEEE International Reliability Physics Symposium, pp. 566-567, 2007.
J.P. Comeau, J.D. Cressler, M. Mitchell, N. Kinayman, and J.-P. Lanteri, “Design and Layout Techniques for the Optimization of nMOS Series-Shunt SPDT Switches in a 130 nm SiGe BiCMOS Technology,” Proceedings of the2007 IEEE MTT-S RFIC Symposium, pp. 457-460, 2007.
T.K. Thrivikraman, W.-M.L. Kuo, J.P. Comeau, A.K. Sutton, J.D. Cressler, P.W. Marshall, and M.A. Mitchell, “A 2 mW, Sub-2 dB Noise Figure, SiGe Low-Noise Amplifier For X-band High-Altitude or Space-based Radar Applications,” Proceedings of the2007 IEEE MTT-S RFIC Symposium, pp. 629-632, 2007.
J. Andrews, J.D. Cressler, and M. Mitchell, “A High-Gain, Two-Stage X-Band SiGe Power Amplifier,” Proceedings of the2007 IEEE MTT-S International Microwave Symposium, pp. 817-820, 2007.
M. Bellini, P. Cheng, A. Appaswamy, J.D. Cressler, and J. Cai, “1/f Noise in SiGe HBTs Fabricated on CMOS-Compatible Thin-Film SOI,” Proceedings of the Fourth SPIE International Symposium on Noise and Fluctuations in Circuits, Devices, and Materials, vol. 6600, pp. 0H1-0H9, 2007.
Cheng, E. Zhao, J.D. Cressler, and J. Prasad, “On the Mechanisms of Low-Frequency Noise in Vertical Silicon pnp BJTs,” Proceedings of the Fourth SPIE International Symposium on Noise and Fluctuations in Circuits, Devices, and Materials, vol. 6600, pp. 0C1-0C9, 2007.
A. Appaswamy, J.D. Cressler, and G. Niu, “A Novel Base Current Phenomenon in SiGe HBTs Operating in Inverse Mode,” Proceedings of the 2007 IEEE European Solid-State Device Research Conference, pp. 350-353, 2007.
C.M. Grens, J.D. Cressler, and A.J. Joseph, “Large-Signal Performance, Linearity, and Reliability Characteristics of Aggressively-Biased Cascode SiGe HBTs for Power Amplifier Applications,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 135-138, 2007.
J.P. Comeau, M.A. Morton, W.-M.L. Kuo, T. Thrivikraman, J.M. Andrews, C.M. Grens, J.D. Cressler, J. Papapolymerou, and M. Mitchell, “A Monolithic 5-Bit SiGe BiCMOS Receiver for X-Band Phased-Array Radar Systems,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 172-175, 2007.
M. Bellini, J.D. Cressler, and J. Cai, “Assessing the High-Temperature Capabilities of SiGe HBTs Fabricated on CMOS-compatible Thin-film SOI,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 234-237, 2007.
J. Yuan, R. Krithivasan, J.D. Cressler, M.H. Khater, D.C. Ahlgren, and A.J. Joseph, “On the Frequency Limits of SiGe HBTs for TeraHertz Applications,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 22-25, 2007.
L. Luo, G. Niu, and J.D. Cressler, “Modeling of Bandgap Narrowing for Consistent Simulation of SiGe HBTs Across a Wide Temperature Range,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 123-126, 2007.
S. Finn, J. Yuan, R. Krithivasan, L. Najafizadeh, P. Cheng, and J.D. Cressler, “A 10 Mbps SiGe BiCMOS Transceiver for Operation Down to Cryogenic Temperatures,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 115-118, 2007.
A. Sutton, K. Moen, J.D. Cressler, M.A. Carts, P.W. Marshall, J.A. Pellish, R.A. Reed, M.L. Alles, and G. Niu, “Proton-Induced SEU in SiGe Digital Logic at Cryogenic Temperatures,” Proceedings of the 2007 IEEE International Semiconductor Device Research Symposium, paper WP6-04, pp. 1-2, 2007 (on CD ROM).
B. Jun, N. Merrett, S. Phillips, A.K. Sutton, J.D. Cressler, J. Williams, and P.W. Marshall, “A Comparison of 63 MeV Proton and 10 keV X-ray Radiation Effects in 4H-SiC Depletion-Mode Vertical Trench JFETs,” Proceedings of the 2007 IEEE International Semiconductor Device Research Symposium, paper WP6-01, pp. 1-2, 2007 (on CD ROM).
A. Raman, M. Turowski, A. Fedoseyev, and J.D. Cressler, “Addressing Challenges in Device-Circuit Modeling for Extreme Environments of Space,” Proceedings of the 2007 IEEE International Semiconductor Device Research Symposium, paper WP2-02, pp. 1-2, 2007 (on CD ROM).
B.O. Woods, H.A. Mantooth, and J.D. Cressler, “SiGe HBT Compact Modeling for Extreme Temperatures,” Proceedings of the 2007 IEEE International Semiconductor Device Research Symposium, paper WP2-05, pp. 1-2, 2007 (on CD ROM).
M. Mitchell and J.D. Cressler, “An X-Band SiGe Single-MMIC Transmit/Receive Module for Radar Applications,” Proceedings of the 2007 IEEE Radar Conference, pp. 664-669, 2007.
A.S. Keys, J.H. Adams, D.O. Frazier, M.C. Patrick, M.D. Watson, M.A. Johnson, J.D. Cressler, and E.A. Kolawa, “Developments in Radiation-Hardened Electronics Applicable to the Vision for Space Exploration,” Proceedings of the 2007 AIAA Space Conference, pp. 1-10 (on CD-ROM), 2007.