Selected
Publications
- J.D. Cressler and G. Niu, Silicon-Germanium Heterojunction Bipolar
Transistors, Artech House, 2003.
- J.D. Cressler, "SiGe HBT Technology: a New Contender for Si-Based
RF and Microwave Circuit Applications,” IEEE Trans. on Microwave
Theory and Techniques, vol. 46, pp. 572-589, 1998.
- J.D. Cressler, "Re-Engineering Silicon: Si-Ge Heterojunction Bipolar
Technology," IEEE Spectrum, pp. 49-55, 1995.
- J.D. Cressler, M.C. Hamilton, G.S. Mullinax, Y. Li, G.F. Niu, C.J. Marshall,
P.W. Marshall, H.S. Kim, M.J. Palmer, A.J. Joseph, and G. Freeman, "The
Effects of Proton Irradiation on the Lateral and Vertical Scaling of UHV/CVD
SiGe HBT BiCMOS Technology,” IEEE Trans. on Nuclear Science, vol.
47, pp. 2515-2520, 2000.
- J.D. Cressler, L. Vempati, J.A. Babcock, R.C. Jaeger, and D.L. Harame,"
Low-Frequency Noise Characteristics of UHV/CVD Si- and SiGe-base Bipolar
Transistors," IEEE Electron Device Letters, vol. 17, pp. 13-15, 1996.
- J.D. Cressler, E.F. Crabbé, J.H. Comfort, J.Y.-C. Sun,
and J.M.C. Stork, "An Epitaxial Emitter Cap SiGe-Base Bipolar Technology
for Liquid-Nitrogen Temperature Operation," IEEE Electron Device
Letters, vol. 15, pp. 472-474, 1994.
Best Papers Awards
- Best Student Paper: J.P. Comeau, M.A. Morton, W.-M.L. Kuo, T. Thrivikraman, J.M. Andrews, C.M. Grens, J.D. Cressler, J. Papapolymerou, and M. Mitchell, “A Monolithic 5-Bit SiGe BiCMOS Receiver for X-Band Phased-Array Radar Systems,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 172-175, 2007.
- Best Student Paper: A. Madan, J.D. Cressler, and S. Koester, “Low-Frequency Noise in Buried Channel SiGe n-MODFETs,” Proceedings of the 4th International SiGe Technology and Devices Meeting (ISTDM), pp. 60-61, 2008.
- George E. Smith Award, IEEE Electron Devices Society, for “Best Paper Published in the 2006 IEEE Electron Device Letters,” (out of 127 papers) for R. Krithivasan, Y. Lu, J.D. Cressler, J.-S. Rieh, M.H. Khater, D. Ahlgren, and G. Freeman, “Half-TeraHertz Operation of SiGe HBTs,” IEEE Electron Device Letters, vol. 27, pp. 567-569, 2006, awarded 12/07.
