Conference Papers
2008 | 2007 | 2006 - 1986
J. Yuan and J.D. Cressler, “Enhancing the Speed of SiGe HBTs Using fT-Doubler Techniques,” Proceedings of the 2007 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 50-53, 2008.
P. Cheng, A. Appaswamy, M. Bellini, and J.D. Cressler, “Probing Hot Carrier Phenomena in npn and pnp SiGe HBTs,” Proceedings of the 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 54-57, 2008.
R. Berger, J.D. Cressler, R. Garbos, M. Mojarradi, L. Peltz, B. Blalock, W. Johnson, G. Niu, F. Dai, A. Mantooth, J. Holmes, M. Alles, P. McCluskey, “Miniaturized Data Acquisition System for Extreme Temperature Environments,” Proceedings of the 2008 IEEE Aerospace Conference,” pp. 1-7 (on CD ROM), 2008.
A.S. Keys, J.H. Adams, J.D. Cressler, R.C. Darty, M.A. Johnson, and M.C. Patrick, “High Performance, Radiation Hardened Electronics for Space and Lunar Environments, Proceedings of the 2008 Space Technology and Applications International Forum (STAIF), pp. 749-756, 2008.
A. Madan, J.D. Cressler, and S. Koester, “Low-Frequency Noise in Buried-Channel SiGe n-MODFETs,” Proceedings of the 2008 International Silicon-Germanium Technology and Devices Meeting (ISTDM), pp. 60-61, 2008.
2007 Papers
W.-M.L. Kuo, J.P. Comeau, J.M. Andrews, J.D. Cressler, and M.A. Mitchell, “A Comparison of Shunt and Series/Shunt nMOSFET Single-Pole Double-Throw Switches for X-Band Phased Array T/R Modules,” Proceedings of the 2007 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 249-252, 2007.
S. Venkataraman, B. Banerjee, C.-H. Lee, J. Laskar, J. Papapolymerou, and J.D. Cressler, “Cryogenic Small-Signal Operation of 0.18 µm MOSFETs,” Proceedings of the 2007 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 52-55, 2007.
Y. Cui, G. Niu, Y. Li, S.S. Taylor, Q. Liang, and J. D. Cressler, “On the Excess Noise Factors and Noise Parameter Equations for RF CMOS,” Proceedings of the 2007 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 40-43, 2007.
M.L. Alles, R.A. Reed, A.N. Kalavagunta, B.D. Sierawski, J.A. Pellish, E. Montes, B. Blalock, L. Peltz, J.D.Cressler, P.W. Marshall, and G. Niu, “Implications of Cold Temperature Environments for Single Event Radiation Effects,” Proceedings of the 2007 GOMAC-Tech - Government Microcircuit Applications and Critical Technology Conference, pp. 429-432, 2007.
P. Cheng, C. Zhu, J.D. Cressler, and A.J. Joseph, “The Mixed-Mode Damage Spectrum of SiGe HBTs,” Technical Digest of the2007 IEEE International Reliability Physics Symposium, pp. 566-567, 2007.
J.P. Comeau, J.D. Cressler, M. Mitchell, N. Kinayman, and J.-P. Lanteri, “Design and Layout Techniques for the Optimization of nMOS Series-Shunt SPDT Switches in a 130 nm SiGe BiCMOS Technology,” Proceedings of the2007 IEEE MTT-S RFIC Symposium, pp. 457-460, 2007.
T.K. Thrivikraman, W.-M.L. Kuo, J.P. Comeau, A.K. Sutton, J.D. Cressler, P.W. Marshall, and M.A. Mitchell, “A 2 mW, Sub-2 dB Noise Figure, SiGe Low-Noise Amplifier For X-band High-Altitude or Space-based Radar Applications,” Proceedings of the2007 IEEE MTT-S RFIC Symposium, pp. 629-632, 2007.
J. Andrews, J.D. Cressler, and M. Mitchell, “A High-Gain, Two-Stage X-Band SiGe Power Amplifier,” Proceedings of the2007 IEEE MTT-S International Microwave Symposium, pp. 817-820, 2007.
M. Bellini, P. Cheng, A. Appaswamy, J.D. Cressler, and J. Cai, “1/f Noise in SiGe HBTs Fabricated on CMOS-Compatible Thin-Film SOI,” Proceedings of the Fourth SPIE International Symposium on Noise and Fluctuations in Circuits, Devices, and Materials, vol. 6600, pp. 0H1-0H9, 2007.
Cheng, E. Zhao, J.D. Cressler, and J. Prasad, “On the Mechanisms of Low-Frequency Noise in Vertical Silicon pnp BJTs,” Proceedings of the Fourth SPIE International Symposium on Noise and Fluctuations in Circuits, Devices, and Materials, vol. 6600, pp. 0C1-0C9, 2007.
A. Appaswamy, J.D. Cressler, and G. Niu, “A Novel Base Current Phenomenon in SiGe HBTs Operating in Inverse Mode,” Proceedings of the 2007 IEEE European Solid-State Device Research Conference, pp. 350-353, 2007.
C.M. Grens, J.D. Cressler, and A.J. Joseph, “Large-Signal Performance, Linearity, and Reliability Characteristics of Aggressively-Biased Cascode SiGe HBTs for Power Amplifier Applications,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 135-138, 2007.
J.P. Comeau, M.A. Morton, W.-M.L. Kuo, T. Thrivikraman, J.M. Andrews, C.M. Grens, J.D. Cressler, J. Papapolymerou, and M. Mitchell, “A Monolithic 5-Bit SiGe BiCMOS Receiver for X-Band Phased-Array Radar Systems,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 172-175, 2007.
M. Bellini, J.D. Cressler, and J. Cai, “Assessing the High-Temperature Capabilities of SiGe HBTs Fabricated on CMOS-compatible Thin-film SOI,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 234-237, 2007.
J. Yuan, R. Krithivasan, J.D. Cressler, M.H. Khater, D.C. Ahlgren, and A.J. Joseph, “On the Frequency Limits of SiGe HBTs for TeraHertz Applications,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 22-25, 2007.
L. Luo, G. Niu, and J.D. Cressler, “Modeling of Bandgap Narrowing for Consistent Simulation of SiGe HBTs Across a Wide Temperature Range,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 123-126, 2007.
S. Finn, J. Yuan, R. Krithivasan, L. Najafizadeh, P. Cheng, and J.D. Cressler, “A 10 Mbps SiGe BiCMOS Transceiver for Operation Down to Cryogenic Temperatures,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 115-118, 2007.
A. Sutton, K. Moen, J.D. Cressler, M.A. Carts, P.W. Marshall, J.A. Pellish, R.A. Reed, M.L. Alles, and G. Niu, “Proton-Induced SEU in SiGe Digital Logic at Cryogenic Temperatures,” Proceedings of the 2007 IEEE International Semiconductor Device Research Symposium, paper WP6-04, pp. 1-2, 2007 (on CD ROM).
B. Jun, N. Merrett, S. Phillips, A.K. Sutton, J.D. Cressler, J. Williams, and P.W. Marshall, “A Comparison of 63 MeV Proton and 10 keV X-ray Radiation Effects in 4H-SiC Depletion-Mode Vertical Trench JFETs,” Proceedings of the 2007 IEEE International Semiconductor Device Research Symposium, paper WP6-01, pp. 1-2, 2007 (on CD ROM).
A. Raman, M. Turowski, A. Fedoseyev, and J.D. Cressler, “Addressing Challenges in Device-Circuit Modeling for Extreme Environments of Space,” Proceedings of the 2007 IEEE International Semiconductor Device Research Symposium, paper WP2-02, pp. 1-2, 2007 (on CD ROM).
B.O. Woods, H.A. Mantooth, and J.D. Cressler, “SiGe HBT Compact Modeling for Extreme Temperatures,” Proceedings of the 2007 IEEE International Semiconductor Device Research Symposium, paper WP2-05, pp. 1-2, 2007 (on CD ROM).
M. Mitchell and J.D. Cressler, “An X-Band SiGe Single-MMIC Transmit/Receive Module for Radar Applications,” Proceedings of the 2007 IEEE Radar Conference, pp. 664-669, 2007.
A.S. Keys, J.H. Adams, D.O. Frazier, M.C. Patrick, M.D. Watson, M.A. Johnson, J.D. Cressler, and E.A. Kolawa, “Developments in Radiation-Hardened Electronics Applicable to the Vision for Space Exploration,” Proceedings of the 2007 AIAA Space Conference, pp. 1-10 (on CD-ROM), 2007.
