Journal Papers
2008 | 2007 | 2006 - 1986
J.-L. Olvera-Cervantes, J.D. Cressler, J.-L. Medina-Monroy, T. Thrivikraman, B. Banerjee, and J. Laskar, “A New Analytical Method for Robust Extraction of the Small-Signal Equivalent Circuit for SiGe HBTs Operating at Cryogenic Temperatures,” IEEE Transactions on Microwave Theory and Techniques, vol. 56, pp. 568-574, 2008.
C.M. Grens, J.D. Cressler, and A.J. Joseph, “On Common-Base Avalanche Instabilities in SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 55, pp. 1276-1285, 2008.
M.A. Morton, J.P. Comeau, J.D. Cressler, M. Mitchell, and J. Papapolymerou, “A 5-bit Silicon-based X-band Phase Shifter Using a Hybrid pi/t High-pass/Low-pass Topology,” IET Microwaves, Antennas, and Propagation, vol. 2, pp. 19-22, 2008.
T.K. Thrivikraman, J. Yuan, J.C. Bardin, H. Mani, J.D. Cressler, and S. Weinreb, “SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers,” IEEE Microwave and Wireless Components Letters, vol. 18, pp. 476-478, 2008.
E.J. Montes, R.A. Reed, J.A. Pellish, M.L. Alles, R.D. Schrimpf, R. A. Weller, M. Varadharajaperumal, G. Niu, A.K. Sutton, R. Diestelhorst, G. Espinel, R. Krithivasan, J.P. Comeau, J.D. Cressler, P.W. Marshall, and G. Vizkelethy, ?Single Event Upset Mechanisms for Low Energy Deposition Events in SiGe HBTs,? IEEE Transactions on Nuclear Science, vol. 55, pp. 1581-1587, 2008.
Yao, D. Dai, R.C. Jaeger, and J.D. Cressler, ?A 12-Bit Cryogenic and Radiation-Tolerant Digital-to- Analog Converter for Aerospace Extreme Environment Applications,? IEEE Transactions on Industrial Electronics, vol. 55, pp. 2810-2819, 2008.
J. Yuan, J.D. Cressler, C. Zhu, Y. Cui, G. Niu, Q. Liang, and A.J. Joseph, “An Investigation of Negative Differential Resistance and Novel Collector Current Kink Effects in SiGe HBTs Operating at Cryogenic Temperatures,” IEEE Transactions on Electron Devices, vol. 54, pp. 504-516, 2007.
J.P. Comeau, L. Najafizadeh, J. Andrews, A.P.G. Prakash, and J.D. Cressler, “An Exploration of Substrate Coupling at K-Band Between a SiGe HBT Power Amplifier and a SiGe HBT Voltage-Controlled-Oscillator,” IEEE Microwave and Wireless Components Letters, vol. 17, pp. 349-351, 2007.
A. Appaswamy, M. Bellini, W.-M.L. Kuo, P. Cheng, J. Yuan, C. Zhu, J.D. Cressler, G. Niu, and A.J. Joseph, “Impact of Scaling on the Inverse Mode Operation of SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 54, pp. 1492-1501, 2007.
C.M. Grens, J.D. Cressler, J.A. Andrews, Q. Liang, and A.J. Joseph, “The Effects of Scaling and Bias Configuration on Operating Voltage Constraints in SiGe HBTs for Mixed-Signal Circuits,” IEEE Transactions on Electron Devices, vol. 54, pp. 1605-1616, 2007.
R.A. Reed, G. Vizkelethy, J.A. Pellish, B. Sierawski, K.M. Warren, M. Porter, J. Wilkinson, P.W. Marshall, G. Niu, J.D. Cressler, R.D. Schrimpf, A. Tipton, and R.A. Weller, “Applications of Heavy Ion Microprobe For Single Event Effects Analysis,” Nuclear Instruments and Methods in Physics Research B, vol. 261, pp. 443-446, 2007.
P. Cheng, C. Zhu, A. Appaswamy, and J.D. Cressler, “A New Current-Sweep Method for Assessing the Mixed-Mode Damage Spectrum of SiGe HBTs,” IEEE Transactions on Device and Materials Reliability, vol. 7, pp. 479-487, 2007.
D.K. Chen, R.D. Schrimpf, D.M. Fleetwood, K.F. Galloway, H. Lee, G. Lucovsky, B. Jun, and J.D. Cressler, “Total Dose Response of HfSiON MOS Capacitors,” IEEE Transactions on Nuclear Science, vol. 54, pp. 1931-1937, 2007.
P. Cheng, B. Jun, A.K. Sutton, C. Zhu, A. Appaswamy, J.D. Cressler, R.D. Schrimpf, and D.M. Fleetwood, “Probing Radiation- and Hot Electron-Induced Damage Processes in SiGe HBTs Using Mixed-Mode Electrical Stress,” IEEE Transactions on Nuclear Science, vol 54, pp. 1938-1945, 2007.
A.K. Sutton, J.P. Comeau, R. Krithivasan, J.D. Cressler, J.A. Pellish, R.A. Reed, P.W. Marshall, M. Varadharajaperumal, G. Niu, and G. Vizkelethy, “An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs,” IEEE Transactions on Nuclear Science, voil. 54, pp. 2044-2052, 2007.
T.S. Mukherjee, K.T. Kornegay, A.K. Sutton, R. Krithivasan, J.D. Cressler, G. Niu, and P.W. Marshall, “A Novel Circuit-Level SEU-Hardening Technique For Low-Voltage, Ultra-High-Speed SiGe HBT Logic Circuits,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2086-2091, 2007.
B. Jun, A. Sutton, R.M. Diestelhorst, G.J. Duperon, J.D. Cressler, J.D. Black, T. Haeffner, R.A. Reed, M.L. Alles, R.D. Schrimpf, D.M. Fleetwood, and P.W. Marshall, “The Application of RHBD to n-MOSFETs Intended for Use in Cryogenic-Temperature Radiation Environments,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2100-2105, 2007.
R.M. Diestelhorst, S. Finn, B. Jun, A.K. Sutton, P. Cheng, P.W. Marshall, J.D. Cressler, R.D. Schrimpf, D.M. Fleetwood, H. Gustat, B. Heinemann, G.G. Fischer, D. Knoll, and B. Tillack, “The Effects of X-Ray and Proton Irradiation on a 200 GHz / 90 GHz Complementary (npn + pnp) SiGe:C HBT Technology,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2190-2195, 2007.
L. Najafizadeh, B. Jun, J.D. Cressler, A.P.G. Prakash, P.W. Marshall, and C.J. Marshall, “A Comparison of the Effects of X-Ray and Proton Irradiation on the Performance of SiGe Precision Voltage References,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2238-2244, 2007.
M. Bellini, B. Jun, A.C. Appaswamy, P. Cheng, J.D. Cressler, P.W. Marshall, B. El-Kareh, S. Balster, and H. Yasuda, “The Effects of Proton Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2245-2250, 2007.
A. Madan, B. Jun, R.M. Diestelhorst, A. Appaswamy, J.D. Cressler, R.D. Schrimpf, D.M. Fleetwood, T. Isaacs-Smith, J.R. Williams, and S.J. Koester, “Radiation Tolerance of Si/SiGe n-MODFETs,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2251-2256, 2007.
J.A. Pellish, R.A. Reed, R.A. Weller, M.H. Mendenhall, P.W. Marshall, A.K. Sutton, R. Krithivasan, J.D. Cressler, S.M. Currie, R.D. Schrimpf, K.M. Warren, B.D. Sierawski, and G. Niu, “On-Orbit Event Rate Calculations for SiGe HBT Shift Registers,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2322-2329, 2007.
M. Varadharajaperumal, G. Niu, X. Wei, T. Zhang, J.D. Cressler, R.A. Reed, and P.W. Marshall, “3-D Simulation of SEU Hardening of SiGe HBTs Using Shared Dummy Collector,” IEEE Transactions on Nuclear Science vol. 54, pp. 2330-2337, 2007.
