Selected
Publications
- J.D. Cressler and G. Niu, Silicon-Germanium Heterojunction Bipolar Transistors, Artech House, 2003.
- J.D. Cressler, "SiGe HBT Technology: a New Contender for Si-Based RF and Microwave Circuit Applications,” IEEE Trans. on Microwave Theory and Techniques, vol. 46, pp. 572-589, 1998.
- J.D. Cressler, "Re-Engineering Silicon: Si-Ge Heterojunction Bipolar Technology," IEEE Spectrum, pp. 49-55, 1995.
- J.D. Cressler, M.C. Hamilton, G.S. Mullinax, Y. Li, G.F. Niu, C.J. Marshall, P.W. Marshall, H.S. Kim, M.J. Palmer, A.J. Joseph, and G. Freeman, "The Effects of Proton Irradiation on the Lateral and Vertical Scaling of UHV/CVD SiGe HBT BiCMOS Technology,” IEEE Trans. on Nuclear Science, vol. 47, pp. 2515-2520, 2000.
- J.D. Cressler, L. Vempati, J.A. Babcock, R.C. Jaeger, and D.L. Harame," Low-Frequency Noise Characteristics of UHV/CVD Si- and SiGe-base Bipolar Transistors," IEEE Electron Device Letters, vol. 17, pp. 13-15, 1996.
- J.D. Cressler, E.F. Crabbé, J.H. Comfort, J.Y.-C. Sun, and J.M.C. Stork, "An Epitaxial Emitter Cap SiGe-Base Bipolar Technology for Liquid-Nitrogen Temperature Operation," IEEE Electron Device Letters, vol. 15, pp. 472-474, 1994.
Best Papers Awards
- Best Student Paper: J.P. Comeau, M.A. Morton, W.-M.L. Kuo, T. Thrivikraman, J.M. Andrews, C.M. Grens, J.D. Cressler, J. Papapolymerou, and M. Mitchell, “A Monolithic 5-Bit SiGe BiCMOS Receiver for X-Band Phased-Array Radar Systems,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 172-175, 2007.
- Best Student Paper: A. Madan, J.D. Cressler, and S. Koester, “Low-Frequency Noise in Buried Channel SiGe n-MODFETs,” Proceedings of the 4th International SiGe Technology and Devices Meeting (ISTDM), pp. 60-61, 2008.
- George E. Smith Award, IEEE Electron Devices Society, for “Best Paper Published in the 2006 IEEE Electron Device Letters,” (out of 127 papers) for R. Krithivasan, Y. Lu, J.D. Cressler, J.-S. Rieh, M.H. Khater, D. Ahlgren, and G. Freeman, “Half-TeraHertz Operation of SiGe HBTs,” IEEE Electron Device Letters, vol. 27, pp. 567-569, 2006, awarded 12/07.
